IndiumV3, Russie, Analysis, bibRecord, 000019

Microstructure of Interfaces in Heterosystems

Identifieur interne : 000019 ( Russie/Analysis ); précédent : 000018; suivant : 000020

Microstructure of Interfaces in Heterosystems

Auteurs : RBID : Pascal:13-0279879

Descripteurs français

Pascal (Inist)
- Microstructure, Interface, Couche mince, Hétérostructure, Aberration, Microscopie électronique balayage transmission, Dispersion énergie, Germanium, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Zircone stabilisée, Morphologie, Structure atomique, Silicium, Structure interface, Substrat GaN, 6865.

English descriptors

KwdEn :
- Aberrations, Atomic structure, Energy dispersion, Germanium, Heterostructures, III-V compound, III-V semiconductors, Indium arsenides, Interface structure, Interfaces, Microstructure, Morphology, Scanning transmission electron microscopy, Silicon, Stabilized zirconia, Thin films.

Abstract

The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O₃/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.

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to stream Main, to step Repository: 000898
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Links to Exploration step

Pascal:13-0279879

Le document en format XML

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<author><name sortKey="Vasiliev, A L" uniqKey="Vasiliev A">A. L. Vasiliev</name>
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<author><name sortKey="Roddatis, V V" uniqKey="Roddatis V">V. V. Roddatis</name>
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<author><name sortKey="Bondarenko, V I" uniqKey="Bondarenko V">V. I. Bondarenko</name>
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<author><name sortKey="Koval Chuk, M V" uniqKey="Koval Chuk M">M. V. Koval Chuk</name>
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<seriesStmt><idno type="ISSN">1995-0780</idno>
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<title level="j" type="main">Nanotechnologies in Russia : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aberrations</term>
<term>Atomic structure</term>
<term>Energy dispersion</term>
<term>Germanium</term>
<term>Heterostructures</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Interface structure</term>
<term>Interfaces</term>
<term>Microstructure</term>
<term>Morphology</term>
<term>Scanning transmission electron microscopy</term>
<term>Silicon</term>
<term>Stabilized zirconia</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term>
<term>Interface</term>
<term>Couche mince</term>
<term>Hétérostructure</term>
<term>Aberration</term>
<term>Microscopie électronique balayage transmission</term>
<term>Dispersion énergie</term>
<term>Germanium</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Zircone stabilisée</term>
<term>Morphologie</term>
<term>Structure atomique</term>
<term>Silicium</term>
<term>Structure interface</term>
<term>Substrat GaN</term>
<term>6865</term>
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<front><div type="abstract" xml:lang="en">The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O<sub>3</sub>
/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.</div>
</front>
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<fA14 i1="01"><s1>National Research Center "Kurchatov Institute", pl. Akademika Kurchatova 1</s1>
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<fC01 i1="01" l="ENG"><s0>The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O<sub>3</sub>
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<s5>15</s5>
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<s5>46</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>6865</s0>
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</fN21>
<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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Microstructure of Interfaces in Heterosystems

Microstructure of Interfaces in Heterosystems

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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